The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. The new Radiation Hardened (RH) PowerMOS devices of the ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
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