According to Infineon's press release, the company is advancing its 8-inch silicon carbide (SiC) technology, having released its first products in the first quarter of 2025. These products, produced ...
On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material with ...
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