Abstract: This work investigates the proton irradiation effect on a kV-class vertical GaN-on-GaN PiN diode under 10-MeV and 50-MeV proton irradiation with fluence up to $1\times 10^{{14}}$ cm−2. After ...
Abstract: The increasing demand for high-power and high-frequency electronics has led to the development of new materials and devices. One such material is gallium nitride (GaN), which has superior ...
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