Abstract: This work investigates the proton irradiation effect on a kV-class vertical GaN-on-GaN PiN diode under 10-MeV and 50-MeV proton irradiation with fluence up to $1\times 10^{{14}}$ cm−2. After ...
Abstract: The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias. The device ...
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