Rohde & Schwarz’s CMP180 tester is supporting MediaTek’s verification of TC-DFT-s-OFDM, a proposed 6G waveform promising ...
It’s rather amazing how many electronic components you can buy right now are not quite the genuine parts that they are sold ...
Carbon nanotubes (CNTs), cylindrical nanostructures made of carbon atoms arranged in a hexagonal lattice, have proved to be ...
Today’s stunning computing power is allowing us to move from human intelligence toward artificial intelligence. And as our ...
On Oct. 3, 1950, three scientists at Bell Labs in New Jersey received a U.S. patent for what would become one of the most important inventions of the 20th century — the transistor. John Bardeen, ...
UK firm announces world's first AI-ready motor drive for collaborative robots QPT has unveiled MicroDyno, what it describes as a breakthrough low-voltage motor drive test platform which demonstrates ...
GOLDEN, Colorado — NASA’s Europa Clipper, now en route to Jupiter, departed with less-than-satisfactory and vulnerable devices that are susceptible to Jupiter’s intense radiation. The spacecraft’s ...
Infineon is advancing industry-wide standardization by offering its CoolGaN Generation 3 (G3) transistors in silicon MOSFET packages. The IGD015S10S1 100-V transistor will be housed in a 5×6-mm ...
In a paper presented at PCIM Nuremberg in June 20241, the authors propose a novel technique to enhance the heating power and thus shorten the heating time, through the inclusion of switching losses.
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
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